ESDALC6V1M3 datasheet(3/7 Pages) STMICROELECTRONICS

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ESDALC6V1W5

1 Characteristics

3/7

Figure 1.

Peak power dissipation versus

initial junction temperature

Figure 2.

Peak pulse power versus

exponential pulse duration

(Tj initial = 25°C)

Figure 3.

Clamping voltage versus peak pulse

current (Tj initial = 25°C, rectangular

waveform, tp = 2.5 µs)

Figure 4.

Capacitance versus reverse applied

voltage (typical values)

Figure 5.

Relative variation of leakage current

versus junction temperature

(typical values)

Figure 6.

Peak forward voltage drop versus

peak forward current (typical

values)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

100

125

150

175

Tj(°C)

Ppp[Tj initial] / Ppp [Tj initial = 25°C]

100

tp(µs)

Tj initial = 25°C

Ppp(W)

0.1

1.0

10.0

100.0

1020

3040

5060

Vcl(V)

tp=2.5µs

Tj initial =25°C

Ipp(A)

C(pF)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

F=1MHz

Vosc=30mV

RMS

Tj=25°C

VR(V)

IR [Tj] / IR [Tj=25°C]

100

125

150

Tj(°C)

1.E-03

1.E-02

1.E-01

1.E+00

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

IFM (A)

V(V)

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