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STP11NM60FP Datasheet(PDF) 1 Page - STMicroelectronics |
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STP11NM60FP Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 12 page  1/12 May 2003 STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-CHANNEL 600V - 0.4 Ω-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh™Power MOSFET (*)Limited only by maximum temperature allowed (1)ISD<11A, di/dt<400A/µs, VDD<V(BR)DSS,TJ<TJMAX TYPICAL RDS(on) = 0.4Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain pro- cess with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. APPLICATIONS The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area TYPE VDSS RDS(on) ID STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 600 V 600 V 600 V 600 V < 0.45 Ω < 0.45 Ω < 0.45 Ω < 0.45 Ω 11 A 11 A 11 A 11 A Symbol Parameter Value Unit STP(B)11NM60(-1) STP11NM60FP VDS Drain-source Voltage (VGS =0) 600 V VDGR Drain-gate Voltage (RGS =20kΩ) 600 V VGS Gate- source Voltage ±30 V ID Drain Current (continuous) at TC = 25°C 11 11 (*) A ID Drain Current (continuous) at TC = 100°C 7 7 (*) A IDM ( ) Drain Current (pulsed) 44 44 (*) A PTOT Total Dissipation at TC = 25°C 160 35 W Derating Factor 1.28 0.28 W/°C dv/dt(1) Peak Diode Recovery voltage slope 15 V/ns VISO Insulation Winthstand Voltage (DC) -- 2500 V Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature 150 °C TO-220 1 2 3 1 2 3 I2PAK 1 2 3 TO-220FP 1 3 D2PAK INTERNAL SCHEMATIC DIAGRAM |
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