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STP12NB30 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP12NB30 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 6 page  STP12NB30 STP12NB30FP N - CHANNEL ENHANCEMENT MODE PowerMESH ™ MOSFET PRELIMINARY DATA s TYPICAL RDS(on) = 0.34 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY(UPS) s DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT INTERNAL SCHEMATIC DIAGRAM January 1998 TO-220 TO-220FP 1 2 3 1 2 3 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t ST P12NB30 ST P12NB30FP VDS Drain-source Volt age (VGS =0) 300 V VDGR Drain- gate Voltage (RGS =20 k Ω) 300 V VGS Gat e-source Voltage ± 30 V ID Drain Current (continuous) at Tc =25 o C12 6.5 A ID Drain Current (continuous) at Tc =100 oC7.5 4 A IDM( •) Drain Current (pulsed) 48 48 A Ptot Tot al Dissipation at Tc =25 oC125 35 W Derating F act or 1 0. 28 W/ oC dv/dt(1) Peak Diode Recovery voltage slope 5.5 5.5 V/ ns VISO Insulat ion Withstand Volt age (DC) 2000 V Tstg Storage T emperat ure -65 to 150 oC Tj Max. O perating Junction Temperature 150 oC TYPE VDSS RDS(on) ID STP3NB60 STP12NB30F P 300 V 300 V <0.40 Ω <0.40 Ω 12A 6.5 A 1/6 |
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