STW11NM80 datasheet(2/14 Pages) STMICROELECTRONICS

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Table 3: Absolute Maximum ratings

(

) Pulse width limited by safe operating area

(*) Limited only by the Maximum Temperature Allowed

Table 4: Thermal Data

Table 5: Avalanche Characteristics

Symbol

Parameter

Value

Unit

TO-220/D2PAK

TO-247

TO-220FP

VDS

Drain-source Voltage (VGS = 0)

800

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

800

VGS

Gate- source Voltage

± 30

Drain Current (continuous) at TC = 25°C

11 (*)

Drain Current (continuous) at TC = 100°C

4.7

4.7 (*)

IDM ( )

Drain Current (pulsed)

44 (*)

PTOT

Total Dissipation at TC = 25°C

150

Derating Factor

1.2

0.28

W /°C

Tstg

Operating Junction Temperature

Storage Temperature

-65 to 150

°C

TO-220/D2PAK

TO-247

TO-220FP

Unit

Rthj-case

Thermal Resistance Junction-case Max

0.83

3.6

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

°C/W

Maximum Lead Temperature For Soldering

Purpose

300

°C

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

2.5

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = 2.5A, VDD = 50 V)

400

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