STP14NF10 datasheet(1/8 Pages) STMICROELECTRONICS

Part #	STP14NF10

Description	N-CHANNEL 60V - 0.1ohm - 14A TO-220 STripFET™ POWER MOSFET

PDF	8 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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December 2000

STP14NF06

N-CHANNEL 60V - 0.1

Ω - 14A TO-220

STripFET™ POWER MOSFET

(1) ISD ≤7A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(2) Starting Tj = 25°C, ID = 114A, VDD = 15V

s

TYPICAL RDS(on) = 0.1Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

LOW GATE CHARGE AT 100 °C

s

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronics unique "Single Feature Size™"

strip-based process. The resulting transistor shows

extremely high packing density for low on-resis-

tance, rugged avalanche characteristics and less

critical alignment steps therefore

a remarkable

manufacturing reproducibility.

APPLICATIONS

s

DC-DC & DC-AC CONVERTERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SOLENOID AND RELAY DRIVERS

s

AUTOMOTIVE ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

(q) Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STP14NF10

60 V

< 0.12

Ω

14 A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

60

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

60

V

VGS

Gate- source Voltage

±20

V

ID

Drain Current (continuos) at TC = 25°C

14

A

ID

Drain Current (continuos) at TC = 100°C

10

A

IDM (q)

Drain Current (pulsed)

56

A

PTOT

Total Dissipation at TC = 25°C

45

W

Derating Factor

0.3

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

6

V/ns

EAS (2)

Single Pulse Avalanche Energy

50

mJ

Tstg

Storage Temperature

–65 to 175

°C

Tj

Max. Operating Junction Temperature

175

°C

TO-220

1

2

3

INTERNAL SCHEMATIC DIAGRAM

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