STP16NS25 datasheet(3/9 Pages) STMICROELECTRONICS

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STP16NS25 - STP16NS25FP

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

VDD = 125 V, ID = 8 A

RG = 4.7Ω VGS = 10 V

(see test circuit, Figure 3)

14.5

Rise Time

Total Gate Charge

VDD = 200V, ID = 16 A,

VGS = 10V

Qgs

Gate-Source Charge

7.9

Qgd

Gate-Drain Charge

22.3

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(Voff)

Turn-off- Delay Time

Fall Time

VDD = 125V, ID = 8 A,

RG =4.7Ω, VGS = 10V

(see test circuit, Figure 3)

tr(Voff)

Off-voltage Rise Time

Fall Time

Cross-over Time

Vclamp = 200V, ID = 16 A,

RG =4.7Ω, VGS = 10V

(see test circuit, Figure 5)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain Current

ISDM (2)

Source-drain Current (pulsed)

VSD (1)

Forward On Voltage

ISD = 16 A, VGS = 0

1.5

trr

Reverse Recovery Time

ISD = 16 A, di/dt = 100A/µs

VDD = 30V, Tj = 150°C

(see test circuit, Figure 5)

270

Qrr

Reverse Recovery Charge

1.5

µC

IRRM

Reverse Recovery Current

11.4

Safe Operating Area for TO-220FP

Safe Operating Area for TO-220

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