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STP20NE06FP Datasheet(PDF) 1 Page - STMicroelectronics |
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STP20NE06FP Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 9 page  STP20NE06 STP20NE06FP N - CHANNEL 60V - 0.06 Ω - 20A TO-220/TO-220FP STripFET ™ POWER MOSFET s TYPICAL RDS(on) = 0.06 Ω s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s LOW GATE CHARGE 100 oC s APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ” Single Feature Size ™ ” strip-based process. The resulting transi- stor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a re- markable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ® INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Un it STP20NE06 STP20NE06FP VDS Drain-source Volt age (VGS =0) 60 V VDGR Drain- gat e Voltage (RGS =20 k Ω)60 V VGS Gat e-source Voltage ± 20 V ID Drain Current (continuous) at Tc =25 oC20 13 A ID Drain Current (continuous) at Tc =100 oC14 9 A IDM ( •) Drain Current (pulsed) 80 80 A Ptot Tot al Dissipation at Tc =25 oC70 30 W Derating F act or 0.47 0.2 W / o C VISO Insulation Withstand Voltage (DC) 2000 V dv/dt Peak Diode Recovery voltage slope 7 V/ns Tstg Storage Temperature -65 to 175 o C Tj Max. Operating Junction Temperature 175 o C ( •) Pulse width limited by safe operating area ( 1)ISD ≤ 20 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX TYPE VDSS RDS(on) ID STP20NE06 STP20NE06FP 60 V 60 V <0.080 Ω <0.080 Ω 20 A 13 A June 1999 TO-220 TO-220FP 1 2 3 1 2 3 1/9 |
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