STP20NM50FP datasheet(4/16 Pages) STMICROELECTRONICS

4 / 16 page

2 Electrical characteristics

STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP

4/16

Table 6.

Switching times

Table 7.

Source drain diode

(1) ISD ≤20A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(2) Pulse width limited by safe operating area

(3) Limited only by maximum temperature allowed

(4) Pulsed: pulse duration = 300µs, duty cycle 1.5%

(5) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

to 80% VDSS

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

Rise Time

VDD=250 V, ID=10A,

RG=4.7Ω, VGS=10V

(see Figure 16)

tr(Voff)

Off-voltage Rise Time

Fall Time

Cross-over Time

VDD=400 V, ID=20A,

RG=4.7Ω, VGS=10V

(see Figure 16)

8.5

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDMNote 2

Source-drain Current

Source-drain Current (pulsed)

VSDNote 4

Forward on Voltage

ISD=20A, VGS=0

1.5

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD=20A, di/dt = 100A/µs,

VDD=100 V, Tj=25°C

350

4.6

µC

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD=20A, di/dt = 100A/µs,

VDD=100 V, Tj=150°C

435

5.9

µC

STP20NM50FP Datasheet(PDF) 4 Page - STMicroelectronics

STP20NM50FP Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Datasheet Download

Link URL