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M54HC10D1 Datasheet(PDF) 4 Page - STMicroelectronics

Part # M54HC10D1
Description  RAD-HARD TRIPLE 3-INPUT NAND GATE
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M54HC10D1 Datasheet(HTML) 4 Page - STMicroelectronics

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M54HC10
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AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr =tf =6ns)
CAPACITIVE CHARACTERISTICS
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) =CPD xVCC xfIN +ICC/3 (per gate)
TEST CIRCUIT
CL = 50pF or equivalent (includes jig and probe capacitance)
RT =ZOUT of pulse generator (typically 50Ω)
Symbol
Parameter
Test Condition
Value
Unit
VCC
(V)
TA = 25°C
-40 to 85°C
-55 to 125°C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
tTLH tTHL Output Transition
Time
2.0
30
75
95
110
ns
4.5
8
15
19
22
6.0
7
13
16
19
tPLH tPHL Propagation Delay
Time
2.0
27
75
95
110
ns
4.5
9
15
19
22
6.0
8
13
16
19
Symbol
Parameter
Test Condition
Value
Unit
VCC
(V)
TA = 25°C
-40 to 85°C
-55 to 125°C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
CIN
Input Capacitance
5.0
5
10
10
10
pF
CPD
Power Dissipation
Capacitance (note
1)
5.0
23
pF



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