STP2HNC60 datasheet(3/9 Pages) STMICROELECTRONICS

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STP2HNC60/STP2HNC60FP

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

Rise Time

VDD = 300V, ID = 1 A

RG = 4.7Ω VGS = 10V

(see test circuit, Figure 3)

8.5

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 480V, ID = 2 A,

VGS = 10V

11.3

2.8

15.5

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

tr(Voff)

Off-voltage Rise Time

Fall Time

Cross-over Time

VDD = 480V, ID = 2 A,

RG =4.7Ω, VGS = 10V

(see test circuit, Figure 5)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain Current

2.2

ISDM (2)

Source-drain Current (pulsed)

8.8

VSD (1)

Forward On Voltage

ISD = 2.2 A, VGS = 0

1.6

trr

Reverse Recovery Time

ISD = 2A, di/dt = 100A/µs,

VDD = 100V, Tj = 150°C

(see test circuit, Figure 5)

480

Qrr

Reverse Recovery Charge

1032

IRRM

Reverse Recovery Current

4.3

Safe Operating Area For TO-220FP

Safe Operating Area

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