Electronic Components Datasheet Search
  English  ▼

X  

Preview PDF HTML

STW22NM60 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STW22NM60
Description  N-CHANNEL 600V - 0.19 ohm - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh™ Power MOSFET
PDF  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW22NM60 Datasheet(HTML) 3 Page - STMicroelectronics

  STW22NM60 Datasheet HTML 1Page - STMicroelectronics STW22NM60 Datasheet HTML 2Page - STMicroelectronics STW22NM60 Datasheet HTML 3Page - STMicroelectronics STW22NM60 Datasheet HTML 4Page - STMicroelectronics STW22NM60 Datasheet HTML 5Page - STMicroelectronics STW22NM60 Datasheet HTML 6Page - STMicroelectronics STW22NM60 Datasheet HTML 7Page - STMicroelectronics STW22NM60 Datasheet HTML 8Page - STMicroelectronics STW22NM60 Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 11 page
background image
3/11
STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60
ELECTRICAL CHARACTERISTICS (CONTINUE)
DYNAMIC
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(*) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS >ID(on) xRDS(on)max,
ID =11 A
TBD
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V,f= 1MHz,VGS = 0
1590
803
52
pF
pF
pF
Coss eq. (2)
Equivalent Output
Capacitance
VGS =0V, VDS = 0V to 400V
130
pF
Rg
Gate Input Resistance
f=1 MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
1.6
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD =200 V, ID =11A
RG = 4.7Ω VGS =10 V
(see test circuit, Figure 3)
25
20
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =400 V, ID =22 A,
VGS =10 V
40
11
25
71
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
Off-voltage Rise Time
VDD = 480 V, ID =22A,
RG =4.7Ω, VGS =10 V
(see test circuit, Figure 5)
13
ns
tf
Fall Time
15
ns
tc
Cross-over Time
26
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
20
A
ISDM (2)
Source-drain Current (pulsed)
80
A
VSD (1)
Forward On Voltage
ISD =22A,VGS =0
1.5
V
trr
Qrr
Irrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 22 A, di/dt = 100 A/µs,
VDD =100 V, Tj =25°C
(see test circuit, Figure 5)
416
5.6
27
ns
µC
A
trr
Qrr
Irrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 22 A, di/dt = 100 A/µs,
VDD =100 V, Tj =150°C
(see test circuit, Figure 5)
544
7.3
28
ns
µC
A



Html Pages

1 2 3 4 5 6 7 8 9 10 11


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com