STP2NA50 datasheet(2/6 Pages) STMICROELECTRONICS

2 / 6 page

THERMAL DATA

TO 220

IS OW ATT 220

Rthj-ca se

Thermal Resistance Junction-case

Max

1. 67

3.57

oC/W

Rthj- amb

Rthc- si nk

Thermal Resistance Junction-ambient

Max

Thermal Resistance Case-sink

Typ

Maximum Lead Temperature For Soldering Purpose

62.5

0.5

300

oC/W

AVALANCHE CHARACTERISTICS

Symb ol

Parameter

Max Valu e

Uni t

IAR

Avalanche Current , Repet itive or Not -Repetitive

(pulse widt h limited by Tj max,

δ <1%)

2.8

EAS

Single Pulse Avalanche Energy

(starting Tj =25

oC, ID =IAR,VDD =50 V)

EAR

Repetit ive Avalanche Energy

(pulse widt h limited by Tj max,

δ <1%)

1.6

IAR

Avalanche Current , Repet itive or Not -Repetitive

(Tc =100

oC, pulse width limited by Tj max, δ <1%)

1.8

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

OFF

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

V(BR)DSS

Drain-source

Breakdown Volt age

ID = 250

µAVGS = 0

500

IDSS

Zero Gat e Voltage

Drain Current (VGS =0)

VDS =Max Rating

VDS =Max Rating x0.8

Tc = 125

250

1000

µA

IGSS

Gate-Source Leakage

Current (VDS =0)

VGS =

± 30 V

100

ON (

∗)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

VGS(th)

Gate T hreshold Voltage VDS =VGS

ID = 250

µA2.25

3.75

RDS( on)

St atic Drain-source On

Resistance

VGS =10 V

ID =1. 4 A

VGS =10 V

ID =1.4 A

Tc = 100

3. 25

Ω

ID(o n)

On Stat e Drain Current

VDS >ID(on) xRDS(on)max

VGS =10 V

2. 8

DYNAMIC

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

gfs (

∗)Forward

Transconductance

VDS >ID(on) xRDS(on)max

ID =1.4 A

0. 8

Ciss

Coss

Crss

Input Capacitance

Output Capacit ance

Reverse Transfer

Capacitance

VDS = 25V

f = 1MHz

VGS = 0

300

400

STP2NA50/FI

2/6

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