STP2NA50FI datasheet(3/6 Pages) STMICROELECTRONICS

3 / 6 page

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

td(on)

Turn-on T ime

Rise Time

VDD =250 V

ID =1.4 A

RG =4.7

Ω

VGS =10 V

(di/ dt)on

Turn-on Current Slope

VDD =400 V

ID =2.8 A

RG =47

Ω

VGS =10 V

350

µs

Qgs

Qgd

Total Gat e Charge

Gate-Source Charge

Gate-Drain Charge

VDD =400 V

ID =2.8 A

VGS =10 V

5.5

SWITCHING OFF

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

tr(Voff)

Of f-voltage Rise Time

Fall T ime

Cross-over T ime

VDD =400 V

ID =2.8 A

RG =4.7

Ω

VGS =10 V

SOURCE DRAIN DIODE

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ISD

ISDM (

•)

Source-drain Current

(pulsed)

2.8

11.2

VSD (

∗)Forward On Voltage

ISD =2.8 A

VGS =0

1.6

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD =2.8 A

di/dt =100 A/

µs

VDD =100 V

Tj =150

380

4.4

µC

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

STP2NA50/FI

3/6

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