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STESB01 Datasheet(PDF) 1 Page - STMicroelectronics |
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STESB01 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 14 page  October 2006 Rev. 3 1/14 14 STESB01 ESBT Base Driver Feature summary ■ Controls ESBT base current in every line/load condition ■ Supply voltage range: 8V to 20 V ■ Storage time controlled by closed loop architecture (from 150ns to 1.5µs) ■ Under voltage lockout with hysteresis Description The STESB01 is a dedicated base current biasing transistor for the Emitter-Switched Bipolar Transistor (ESBT) family of power switches. The device is able to control the ESBT storage time (from 150ns to 1.5ìs) using closed loop architecture. This guarantees proper operation of the ESBT in every line and load condition, avoiding oversaturation of the device and, at the same time, ensuring the correct base current when a higher load is required. The storage time can be adjusted with an external resistor, which allows maximum flexibility in different applications. The optimization of the base current value also reduces the base current losses to minimum level. SOT23-6L SO-8 www.st.com Order code Part number Package Packaging STESB01STR SOT23-6L 3000 Parts per Reel STESB01DR SO-8 2500 Parts per Reel |
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