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STP30N06 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STP30N06
Description  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PDF  10 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP30N06 Datasheet(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD =30 V
ID =30 A
RG =50
VGS =10 V
(see test circuit, figure 3)
50
190
70
270
ns
ns
(di/dt) on
Turn-on Current Slope
VDD =40 V
ID =30 A
RG =50
VGS =10 V
(see test circuit, figure 5)
190
A/
µs
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =40 V
ID =30 A
VGS =10 V
30
11
14
45
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Of f-voltage Rise Time
Fall Time
Cross-over Time
VDD =40 V
ID =30 A
RG =50
VGS =10 V
(see test circuit, figure 5)
120
75
180
170
100
250
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
ISD
I SDM(
•)
Source-drain Current
Source-drain Current
(pulsed)
30
120
A
A
VSD (
∗)
Forward On Volt age
ISD =30 A
VGS =0
1.6
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 30 A
di/dt = 100 A/
µs
VDD =30 V
Tj =150
oC
(see test circuit, figure 5)
85
0.25
6
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Areas For TO-220
Safe Operating Areas For ISOWATT220
STP30N06/FI
3/10



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