STP3NC60 datasheet(1/9 Pages) STMICROELECTRONICS

Part #	STP3NC60

Description	N-CHANNEL 600V - 3.3ohm - 3A TO-220/TO-220FP PowerMeshII MOSFET

PDF	9 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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May 2000

STP3NC60

STP3NC60FP

N-CHANNEL 600V - 3.3

Ω - 3A TO-220/TO-220FP

PowerMesh

™II MOSFET

s

TYPICAL RDS(on) = 3.3 Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

NEW HIGH VOLTAGE BENCHMARK

s

GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH

™ II is the evolution of the first

generation of MESH OVERLAY

™. The layout re-

finements introduced greatly improve the Ron*area

figure of merit while keeping the device at the lead-

ing edge for what concerns swithing speed, gate

charge and ruggedness.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVER

ABSOLUTE MAXIMUM RATINGS

(

•)Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STP3NC60

600 V

<3.6

Ω

3A

STP3NC60FP

600V

<3.6

Ω

2A

Symbol

Parameter

Value

Unit

STP3NC60

STP3NC60FP

VDS

Drain-source Voltage (VGS =0)

600

V

VDGR

Drain-gate Voltage (RGS =20 kΩ)

600

V

VGS

Gate- source Voltage

±30

V

ID

Drain Current (continuos) at TC =25°C

33

A

ID

Drain Current (continuos) at TC = 100°C

1.9

1.9(*)

A

IDM (q)

Drain Current (pulsed)

12

12(*)

A

PTOT

Total Dissipation at TC =25°C

80

40

W

Derating Factor

0.64

0.32

W/

°C

dv/dt (1)

Peak Diode Recovery voltage slope

3.5

V/ns

VISO

Insulation Withstand Voltage (DC)

-

2000

Tstg

Storage Temperature

–60 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

(1)ISD ≤3A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX.

(*)Limited only by maximum temperature allowed

INTERNAL SCHEMATIC DIAGRAM

1

2

3

1

2

3

TO-220

TO-220FP

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