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PRELIMINARY DATA

October 2000

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

STP40NS15

N-CHANNEL 150V - 0.042

Ω - 40A TO-220

MESH OVERLAY™ MOSFET

INTERNAL SCHEMATIC DIAGRAM

s

s

EXTREMELY HIGH dv/dt CAPABILITY

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

This powermos MOSFET is designed using the

company’s consolidated strip layout-based MESH

OVERLAY

and improves the performances compared with

standard parts from various sources.

APPLICATIONS

s

HIGH CURRENT SWITCHING

s

UNINTERRUPTIBLE POWER SUPPLY (UPS)

s

PRIMARYSWITCH IN ISOLATED DC-DC

CONVERTERS

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE

STP40NS15

150 V

<0.052

Ω

40A

Symbol

Parameter

Value

Unit

150

V

150

V

Gate- source Voltage

±20

V

40

A

25

A

Drain Current (pulsed)

160

A

140

W

Derating Factor

0.933

W/°C

dv/dt

Peak Diode Recovery voltage slope

9

V/ns

Storage Temperature

–65 to 175

°C

Max. Operating Junction Temperature

175

°C

1

2

3

TO-220