STP45NF06 datasheet(1/6 Pages) STMICROELECTRONICS

Part #	STP45NF06

Description	N-CHANNEL 60V - 0.022ohm - 38A TO-220 STripFET™ POWER MOSFET

PDF	6 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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PRELIMINARY DATA

November 2000

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

STP45NF06

N-CHANNEL 60V - 0.022

Ω - 38A TO-220

STripFET™ POWER MOSFET

(1) ISD ≤38A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

s

TYPICAL RDS(on) = 0.022Ω

s

EXCEPTIONAL dv/dt CAPABILITY

DESCRIPTION

This Power Mosfet is the latest development of

STMicroelectronics

unique

“Single

Feature

Size

™” strip-based process. The resulting tran-

sistor shows extremely high packing density for

low on-resistance, rugged avalance characteris-

tics and less critical alignment steps therefore a re-

markable manufacturing reproducibility.

APPLICATIONS

s

HIGH-EFFICIENCY DC-DC CONVERTERS

s

SOLENOID AND RELAY DRIVERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-DC & DC-AC CONVERTERS

ABSOLUTE MAXIMUM RATINGS

(q) Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STP45NF06

60V

<0.028

Ω

38A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

60

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

60

V

VGS

Gate- source Voltage

±20

V

ID

Drain Current (continuos) at TC = 25°C

38

A

ID

Drain Current (continuos) at TC = 100°C

26

A

IDM (q)

Drain Current (pulsed)

152

A

PTOT

Total Dissipation at TC = 25°C

80

W

Derating Factor

0.53

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

7

V/ns

Tstg

Storage Temperature

–65 to 175

°C

Tj

Max. Operating Junction Temperature

175

°C

TO-220

1

2

3

INTERNAL SCHEMATIC DIAGRAM

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