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HMC616LP3 Datasheet(PDF) 7 Page - Hittite Microwave Corporation |
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HMC616LP3 Datasheet(HTML) 7 Page - Hittite Microwave Corporation |
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7 / 10 page ![]() 5 5 - 242 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Absolute Maximum Ratings Drain Bias Voltage (Vdd) +6 Vdc RF Input Power (RFIN) (Vdd = +5 Vdc) +10 dBm Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 8.93 mW/°C above 85 °C) 0.58 W Thermal Resistance (channel to ground paddle) 112 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Vdd (Vdc) Idd (mA) 2.7 20 3.0 30 3.3 40 4.5 80 5.0 90 5.5 100 Note: Amplifier will operate over full voltage range shown above. Typical Supply Current vs. Vdd (Rbias = 3.92kΩ) Vdd (V) Rbias (Ω) Idd (mA) Min Max Recommended 3V 1K [1] Open Circuit 2.7k 27 3.92k 31 4.7k 33 10k 39 5V 0 Open Circuit 820 73 2k 84 3.92k 91 10k 95 [1] With Vdd= 3V, Rbias < 1K Ohm is not recommeded and may result in the LNA becoming conditionally stable. Absolute Bias Resistor Range & Recommended Bias Resistor Values for Idd HMC616LP3 / 616LP3E v00.0508 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz |
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