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STP4NC50FP Datasheet(PDF) 1 Page - STMicroelectronics |
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STP4NC50FP Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 9 page  1/9 May 2000 STP4NC50 STP4NC50FP N-CHANNEL 500V - 2.2 Ω - 4A TO-220/TO-220FP PowerMesh ™II MOSFET s TYPICAL RDS(on) = 2.2 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s NEW HIGH VOLTAGE BENCHMARK s GATE CHARGE MINIMIZED DESCRIPTION The PowerMESH ™ II is the evolution of the first generation of MESH OVERLAY ™. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES ABSOLUTE MAXIMUM RATINGS ( •)Pulse width limited by safe operating area TYPE VDSS RDS(on) ID STP4NC50 500 V < 2.7 Ω 4A STP4NC50FP 500 V < 2.7 Ω 4A Symbol Parameter Value Unit STP4NC50 STP4NC50FP VDS Drain-source Voltage (VGS =0) 500 V VDGR Drain-gate Voltage (RGS =20 kΩ) 500 V VGS Gate- source Voltage ±30 V ID Drain Current (continuos) at TC =25°C 4 4(*) A ID Drain Current (continuos) at TC = 100°C 2.5 2.5(*) A IDM (q) Drain Current (pulsed) 12 16(*) A PTOT Total Dissipation at TC =25°C 80 40 W Derating Factor 0.64 0.32 W/ °C dv/dt (1) Peak Diode Recovery voltage slope 3.5 V/ns VISO Insulation Withstand Voltage (DC) - 2000 V Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature 150 °C (1)ISD ≤4A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX. INTERNAL SCHEMATIC DIAGRAM 1 2 3 1 2 3 TO-220 TO-220FP |
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