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STP4NC80Z Datasheet(PDF) 3 Page - STMicroelectronics

Part # STP4NC80Z
Description  N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™ II MOSFET
PDF  14 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP4NC80Z Datasheet(HTML) 3 Page - STMicroelectronics

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STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
ON (1)
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS =VGS,ID = 250µA
345
V
RDS(on)
Static Drain-source On
Resistance
VGS =10V, ID =2 A
2.4
2.8
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS >ID(on) xRDS(on)max,
ID =2A
4S
Ciss
Input Capacitance
VDS = 25V,f= 1MHz,VGS =0
1200
pF
Coss
Output Capacitance
90
pF
Crss
Reverse Transfer
Capacitance
11
pF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD =400 V, ID =2 A
RG = 4.7Ω VGS =10V
(see test circuit, Figure 3)
27
ns
tr
Rise Time
10
ns
Qg
Total Gate Charge
VDD =640V, ID = 4A,
VGS =10V
27
36.5
nC
Qgs
Gate-Source Charge
7
nC
Qgd
Gate-Drain Charge
10
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
Off-voltage Rise Time
VDD = 640V, ID =4 A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 5)
11
ns
tf
Fall Time
10
ns
tc
Cross-over Time
24
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
4
A
ISDM (2)
Source-drain Current (pulsed)
16
A
VSD (1)
Forward On Voltage
ISD = 4 A, VGS =0
1.6
V
trr
Reverse Recovery Time
ISD = 4 A, di/dt = 100A/µs,
VDD =50V, Tj = 150°C
(see test circuit, Figure 5)
560
ns
Qrr
Reverse Recovery Charge
3.4
µC
IRRM
Reverse Recovery Current
13
A



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