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TSL1018 Datasheet(PDF) 4 Page - STMicroelectronics |
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TSL1018 Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 15 page ![]() Electrical characteristics TSL1018 4/15 3 Electrical characteristics Note: Limits are 100% production tested at 25°C. Behavior at the temperature range limits is guaranteed through correlation and by design. Table 3. Electrical characteristics for Tamb = 25°C , VDD =+5V, VSS =-5V, RL =10kΩ, CL = 10pF (unless otherwise specified) Symbol Parameter Test conditions Min. Typ. Max. Unit VIO Input offset voltage VICM = 0V 12 mV ΔVIO Input offset voltage drift -40°C < Tamb < +85°C 5 μV/°C IIB Input bias current VICM = 0V, buffers A & B VICM = 0V, buffers C to R & COM 140 70 nA RIN Input impedance 1 G Ω CIN Input capacitance 1.35 pF VOL Output voltage low IOUT =-5mA Buffers C to P Buffers Q, R & COM -4.85 -4.92 -4.80 -4.85 V VOH Output voltage high IOUT = 5mA for buffers A & B 4.82 4.87 V IOUT Output current (A to R buffers) ±40 mA COM buffer ±150 PSRR Power supply rejection ratio VCC= 6.5 to 15.5V 80 100 dB ICC Supply current No load 8 11 mA SR Slew rate (rising & falling edge) -4V < VOUT < +4V 20% to 80% 1.1 V/ μs ts Settling time Settling to 0.1%, VOUT=2V step 5 μs BW Bandwidth at -3dB RL=10kΩ, CL=10pF 3.5 MHz Gm Phase margin RL=10kΩ, CL=10pF 60 degrees Cs Channel separation f=1MHz 75 dB |
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