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AP70L02GS Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP70L02GS Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
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1 / 8 page ![]() Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low On-resistance BVDSS 25V ▼ Simple Drive Requirement RDS(ON) 9mΩ ▼ Fast Switching ID 66A Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-case Thermal Resistance Junction-case Max. 1.9 ℃/W Rthj-amb Thermal Resistance Junction-ambient Max. 62 ℃/W Data & specifications subject to change without notice 200831073-1/6 Thermal Data Parameter Pulsed Drain Current 1 210 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.53 Storage Temperature Range Total Power Dissipation 66 -55 to 150 Continuous Drain Current, VGS @ 10V 66 Continuous Drain Current, VGS @ 10V 42 Drain-Source Voltage 25 Gate-Source Voltage ±20 AP70L02GS/P Parameter Rating RoHS-compliant Product G D S G D S TO-263(S) G D S TO-220(P) The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP70L02GP) is available for low-profile applications. |
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