STW13NK60Z datasheet(2/17 Pages) STMICROELECTRONICS

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1 Electrical ratings

STB13NK60Z - STB13NK60Z-1 - STP13NK60Z/FP - STW13NK60Z

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Electrical ratings

Table 1.

Absolute maximum ratings

Table 2.

Thermal data

Table 3.

Avalanche characteristics

Symbol

Parameter

Value

Unit

TO-220 / TO-247

I²PAK / D²PAK

TO-220FP

VDS

Drain-Source Voltage (VGS = 0)

600

VDGR

Drain-gate Voltage (RGS = 20kΩ)

600

VGS

Gate-Source Voltage

± 30

Drain Current (continuous) at TC = 25°C

13 (Note 1)

Drain Current (continuous) at TC = 100°C

8.2

8.2 (Note 1)

IDM Note 2

Drain Current (pulsed)

52 (Note 1)

PTOT

Total Dissipation at TC = 25°C

150

Derating Factor

1.20

0.27

W/°C

Vesd(G-S)

G-S ESD (HBM C=100pF, R=1.5k

Ω)

4000

dv/dt Note 3 Peak Diode Recovery voltage slope

4.5

V/ns

VISO

Insulation Withstand Volatge (DC)

2500

Tstg

Operating Junction Temperature

Storage Temperature

-55 to 150

°C

TO-220

I²PAK / TO-247

D²PAK

TO-220FP

Unit

Rthj-case

Thermal Resistance Junction-case Max

0.83

3.6

°C/W

Rthj-pcb

Note 7

Thermal Resistance Junction-pcb Max

°C/W

Rthj-amb

Thermal Resistance Junction-amb Max

62.5

°C/W

Maximum Lead Temperature For Soldering

Purpose

300

°C

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, repetitive or

Not-Repetitive (pulse width limited by Tj max)

EAS

Single Pulse Avalanche Energy

(starting Tj=25°C, ID=IAR, VDD= 50V)

400

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