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STP5NB90FP Datasheet(PDF) 1 Page - STMicroelectronics |
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STP5NB90FP Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 6 page ![]() STP5NB90 STP5NB90FP N - CHANNEL 900V - 2.3 Ω - 5A - TO-220/TO-220FP PowerMESH ™ MOSFET PRELIMINARY DATA s TYPICAL RDS(on) = 2.3 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY(UPS) s DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT INTERNAL SCHEMATIC DIAGRAM September 1998 TO-220 TO-220FP 1 2 3 1 2 3 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Un it STP5NB90 STP5NB90F P VDS Drain-source Voltage (VGS =0) 900 V VDGR Drain- gate Volt age (RGS =20 k Ω) 900 V VGS G ate-source Voltage ± 30 V ID Drain Current (continuous) at Tc =25 oC5 5(*) A ID Drain Current (continuous) at Tc =100 oC3.1 3.1(*) A IDM ( •) Drain Current (pulsed) 20 20 A Ptot T otal Dissipation at Tc =25 oC 125 40 W Derating Factor 1.0 0.32 W / o C dv/dt (1) Peak Diode Recovery volt age slope 4.5 4.5 V/ns VISO I nsulat ion W ithstand Voltage (DC) 2000 V Tstg Storage Temperat ure -65 to 150 o C Tj Max. Operating Junction Temperature 150 o C ( •) Pulse width limited by safe operating area ( 1)ISD ≤5 Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX (*) Limited only by maximum temperature allowed TYPE VDSS RDS(on) ID ST P5NB90 ST P5NB90FP 900 V 900 V <2.5 Ω <2.5 Ω 5A 5A 1/6 |
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