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STP5NC50 Datasheet(PDF) 3 Page - STMicroelectronics |
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STP5NC50 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 12 page ![]() 3/12 STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1 Safe Operating Area for TO-220FP Safe Operating Area for TO-220/D2PAK/I2PAK ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulseduration=300µs, duty cycle1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time Rise Time VDD =250V, ID = 2.5A RG = 4.7Ω VGS =10V (see test circuit, Figure 3) 14 ns tr 15 ns Qg Total Gate Charge VDD =400V, ID = 5.5A, VGS =10V 17.5 24.5 nC Qgs Gate-Source Charge 3 nC Qgd Gate-Drain Charge 9 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 400V, ID = 5.5A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 5) 12 ns tf Fall Time 14 ns tc Cross-over Time 20 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 5.5 A ISDM (2) Source-drain Current (pulsed) 22 A VSD (1) Forward On Voltage ISD = 5.5A, VGS =0 1.6 V trr Reverse Recovery Time ISD = 5.5A, di/dt = 100A/µs, VDD =100V, Tj =150°C (see test circuit, Figure 5) 360 ns Qrr Reverse Recovery Charge 1.6 µC IRRM Reverse Recovery Current 9 A |
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