STP6NB25 datasheet(1/9 Pages) STMICROELECTRONICS

Part #	STP6NB25

Description	N-CHANNEL 250V - 0.9ohm - 6A TO-220/TO-220FP PowerMesh MOSFET

PDF	9 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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Jun 2000

STP6NB25

STP6NB25FP

N-CHANNEL 250V - 0.9

Ω - 6A TO-220/TO-220FP

PowerMesh

™ MOSFET

s

TYPICAL RDS(on) = 0.9 Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performances. The new patent pending strip layout

coupled with the Company’s proprieraty edge termi-

nation structure, gives the lowest RDS(on) per area,

exceptional avalanche and dv/dt capabilities and

unrivalled gate charge and switching characteris-

tics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

UNINTERRUPTIBLE POWER SUPPLY (UPS)

s

DC-DC & DC-AC CONVERTERS FOR

TELECOM , INDUSTRIAL AND CONSUMER

ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

(

•)Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STP6NB25

250 V

< 1.1

Ω

6A

STP6NB25FP

250 V

< 1.1

Ω

3.7 A

Symbol

Parameter

Value

Unit

STP6NB25

STP6NB25FP

VDS

Drain-source Voltage (VGS =0)

250

V

VDGR

Drain-gate Voltage (RGS =20 kΩ)

250

V

VGS

Gate- source Voltage

±30

V

ID

Drain Current (continuos) at TC =25°C

6

3.7

A

ID

Drain Current (continuos) at TC = 100°C

3.8

2.3

A

IDM (q)

Drain Current (pulsed)

24

A

PTOT

Total Dissipation at TC =25°C

75

30

W

Derating Factor

0.6

0.24

W/

°C

dv/dt (1)

Peak Diode Recovery voltage slope

5.5

V/ns

VISO

Insulation Withstand Voltage (DC)

-

2000

Tstg

Storage Temperature

–60 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

(1)ISD ≤6A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX.

INTERNAL SCHEMATIC DIAGRAM

1

2

3

1

2

3

TO-220

TO-220FP

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