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STP6NB80FP Datasheet(PDF) 3 Page - STMicroelectronics |
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STP6NB80FP Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 6 page ![]() ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time VDD =400 V ID =3 A RG =4.7 Ω VGS =10 V 19 9 27 13 ns ns Qg Q gs Qgd Tot al Gate Charge Gat e-Source Charge Gat e-Drain Charge VDD = 640 V ID =6 A VGS =10 V 33 11 14 47 nC nC nC SWITCHING OFF Symbo l Parameter Test Con ditions Min. Typ. Max. Unit tr(Voff) tf tc Off -volt age Rise Time Fall Time Cross-over Time VDD = 640V ID =6 A RG =4.7 Ω VGS =10 V 11 9 16 16 13 23 ns ns ns SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions Min. Typ. Max. Unit ISD ISDM ( •) Source-drain Current Source-drain Current (pulsed) 5. 7 22. 8 A A VSD ( ∗) Forward On Voltage ISD =6 A VGS =0 1. 6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 6 A di/dt = 100 A/ µs VDD = 100 V Tj =150 oC 700 5.8 16.5 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area STP6NB80/FP 3/6 |
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