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STP6NC60FP Datasheet(PDF) 1 Page - STMicroelectronics |
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STP6NC60FP Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 10 page  1/10 May 2001 STP6NC60 - STP6NC60FP STB6NC60-1 N-CHANNEL 600V - 1 Ω - 6A TO-220/TO-220FP/I2PAK PowerMESH™II MOSFET s TYPICAL RDS(on) = 1.0 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s NEW HIGH VOLTAGE BENCHMARK s GATE CHARGE MINIMIZED DESCRIPTION The PowerMESH ™II is the evolution of the first generation of MESH OVERLAY ™. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area (*) Limited only by maximum temperature allowed TYPE VDSS RDS(on) ID STP(B)6NC60(-1) 600 V < 1.2 Ω 6 A STP6NC60FP 600 V < 1.2 Ω 6 A Symbol Parameter Value Unit STP(B)6NC60(-1) STP6NC60FP VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 600 V VGS Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 6 6(*) A ID Drain Current (continuos) at TC = 100°C 3.8 3.8(*) A IDM (q) Drain Current (pulsed) 24 24(*) A PTOT Total Dissipation at TC = 25°C 125 40 W Derating Factor 1.0 0.32 W/°C dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns VISO Insulation Withstand Voltage (DC) - 2500 V Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature 150 °C (1)ISD ≤6A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. INTERNAL SCHEMATIC DIAGRAM TO-220 TO-220FP 1 2 3 I2PAK 1 2 3 |
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