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STP6NS25 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STP6NS25
Description  N-CHANNEL 250V - 0.9ohm - 6A TO-220 MESH OVERLAY™MOSFET
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP6NS25 Datasheet(HTML) 1 Page - STMicroelectronics

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November 2002
STP6NS25
N-CHANNEL 250V - 0.9
Ω -6A TO-220
MESH OVERLAY™ MOSFET
s
TYPICAL RDS(on) = 0.9 Ω
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STP6NS25
250 V
< 1.1
Ω
6A
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS =0)
250
V
VDGR
Drain-gate Voltage (RGS =20kΩ)
250
V
VGS
Gate- source Voltage
± 20
V
ID
Drain Current (continuos) at TC = 25°C
6A
ID
Drain Current (continuos) at TC = 100°C
4A
IDM ( )
Drain Current (pulsed)
24
A
PTOT
Total Dissipation at TC = 25°C
70
W
Derating Factor
0.56
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
5
V/ns
Tstg
Storage Temperature
–65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
(1) ISD≤ 6A, di/dt≤300 A/µs, VDD≤ V(BR)DSS,Tj≤TjMAX
INTERNAL SCHEMATIC DIAGRAM
TO-220
1
2
3


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