STP7NB30FP datasheet(1/9 Pages) STMICROELECTRONICS

Part #	STP7NB30FP

Description	N - CHANNEL 300V - 0.75ohm - 7A - TO-220/TO-220FP PowerMESH MOSFET

PDF	9 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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STP7NB30

STP7NB30FP

N - CHANNEL 300V - 0.75

Ω - 7A - TO-220/TO-220FP

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 0.75

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power MOSFETs with

outstanding performances. The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

August 1999

TO-220

TO-220FP

1

2

3

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

ST P7NB30

STP7NB30F P

VDS

Drain-source Voltage (VGS = 0)

300

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

300

V

VGS

G ate-source Volt age

± 30

V

ID

Drain Current (continuous) at Tc =25

oC7

4

A

ID

Drain Current (continuous) at Tc =100

oC4.4

2.5

A

IDM (

•)

Drain Current (pulsed)

28

A

Ptot

T otal Dissipat ion at Tc =25

oC85

30

W

Derating Factor

0.68

0.24

W /

o C

dv/dt (1)

Peak Diode Recovery voltage slope

5.5

V/ns

VISO

I nsulation W ithstand Voltage (DC)



2000

V

Tstg

Storage Temperature

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 7A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

ST P7NB30

ST P7NB30FP

300 V

<0.90

Ω

<0.90

Ω

7A

4A

1/9

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