STP7NB40

STP7NB40FP

N - CHANNEL ENHANCEMENT MODE

PowerMESH

™ MOSFET

PRELIMINARY DATA

s

Ω

s

EXTREMELY HIGH dV/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process,

SGS-Thomson

has

designed

an

advanced

family

of

power

MOSFETs

with

outstanding

performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STP7NB40

STP7NB40FP

400

V

Ω)

400

V

Gate-source Voltage

± 30

V

7

4.4

A

4.4

2.8

A

•)

Drain Current (pulsed)

28

28

A

35

W

Derating Factor

0.8

0.28

W/

Peak Diode Recovery voltage slope

4.5

4.5

V/ns

Insulation Withstand Voltage (DC)



2000

V

Storage Temperature

-65 to 150

Max. Operating Junction Temperature

150

(

•) Pulse width limited by safe operating area

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

January 1998

1

2

3

TO-220

TO-220FP

1

2

3

TYPE

STP7NB40

STP7NB40FP

400 V

400 V

< 0.9

Ω

< 0.9

Ω

7.0 A

4.4 A

1/4