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STP80NF03 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP80NF03 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 6 page ![]() STP80NF03L-04 N-CHANNEL 30V - 0.0034 Ω - 80A TO-220 STripFET ™ POWER MOSFET PRELIMINARY DATA s TYPICAL RDS(on) = 0.0034 Ω s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s LOW GATE CHARGE 100 oC s APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size ™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc. ) ® INTERNAL SCHEMATIC DIAGRAM November 1999 T YPE VDSS RDS(on) ID STP80NF03L-04 30 V < 0. 004 Ω 80 A 1 2 3 TO-220 ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Value Unit VDS Drain-source Voltage (VGS =0) 30 V VDGR Drain- gate Voltage (RGS =20 k Ω)30 V VGS G ate-source Volt age ± 20 V ID( ••) Drain Current (continuous) at Tc =25 oC80 A ID Drain Current (continuous) at Tc = 100 oC56 A IDM( •) Drain Current (pulsed) 320 A Ptot T otal Dissipation at Tc =25 oC 210 W Derating Factor 1.43 W / oC EAS (1) Single Pulse Avalanche Energy 2 J Tstg Storage Temperature -65 to 175 oC Tj Max. Operating Junction Temperature 175 oC ( •) Pulse width limited by safe operating area ( ••) Current limited by package (1 ) starting Tj =25 oC, ID =40A , VDD =15V 1/6 |
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