STP80NF55L-06 datasheet(1/8 Pages) STMICROELECTRONICS

Part #	STP80NF55L-06

Description	N - CHANNEL 55V - 0.005 ohm - 80A TO-220 STripFET POWER MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STP80NF55L-06

N - CHANNEL 55V - 0.005

Ω - 80A TO-220

STripFET

™ POWER MOSFET

s

TYPICAL RDS(on) = 0.005

Ω

s

LOW THRESHOLD DRIVE

s

LOGIC LEVEL DEVICE

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronics

unique

”Single

Feature

Size

™” strip-based process. The resulting

transistor shows extremely high packing density

for

low

on-resistance,

rugged

avalanche

characteristics and less critical alignment steps

therefore

a

remarkable

manufacturing

reproducibility.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SOLENOID AND RELAY DRIVERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-DC & DC-AC CONVERTERS

®

INTERNAL SCHEMATIC DIAGRAM

October 1999

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS =0)

55

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)55

V

VGS

G ate-source Volt age

± 20

V

ID

Drain Current (continuous) at Tc =25

oC80

A

ID

Drain Current (continuous) at Tc = 100

oC57

A

IDM(

•)

Drain Current (pulsed)

320

A

Ptot

T otal Dissipation at Tc =25

oC

210

W

Derating Factor

1.4

W /

oC

EAS (1)

Single Pulse Avalanche Energy

1

J

Tstg

Storage Temperature

-65 to 175

oC

Tj

Max. Operating Junction Temperature

175

oC

(

•) Pulse width limited by safe operating area

( 1

) starting Tj =25 oC, ID =40A , VDD = 30V

TYPE

VDSS

RDS(on )

ID

STP80NF55L-06

55 V

< 0.0065

Ω

80 A

1

2

3

TO-220

1/8

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STP80NF55L-06 Datasheet(PDF) 1 Page - STMicroelectronics

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