STP80NF55L-08 datasheet(1/8 Pages) STMICROELECTRONICS

Part #	STP80NF55L-08

Description	N-CHANNEL 55V - 0.0065ohm - 80A - TO-220/D2PAK STripFET™ II POWER MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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PRELIMINARY DATA

April 2003

STP80NF55L-08

STB80NF55L-08

N-CHANNEL 55V - 0.0065

Ω - 80A - TO-220/D2PAK

STripFET™ II POWER MOSFET

(1) Current Limited by Package

(2) ISD ≤80A, di/dt ≤500A/µs, VDD =40V Tj ≤ TJMAX.

(3) Starting Tj=25°C, ID=40A, VDD=40V

s

TYPICAL RDS(on) = 0.0065Ω

s

LOW THRESHOLD DRIVE

s

LOGIC LEVEL DEVICE

DESCRIPTION

This Power Mosfet is the latest development of

STMicroelectronics

unique

“Single

Feature

Size

™” strip-based process. The resulting tran-

sistor shows extremely high packing density for

low on-resistance, rugged avalance characteris-

tics and less critical alignment steps therefore a re-

markable manufacturing reproducibility.

APPLICATIONS

s

SOLENOID AND RELAY DRIVERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-DC CONVERTERS

s

AUTOMOTIVE ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

(q) Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STP80NF55L-08

STB80NF55L-08

55 V

0.008

Ω

0.008

Ω

80 A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS =0)

55

V

VDGR

Drain-gate Voltage (RGS =20kΩ)

55

V

VGS

Gate- source Voltage

± 16

V

ID (1)

Drain Current (continuos) at TC = 25°C

80

A

ID (1)

Drain Current (continuos) at TC = 100°C

80

A

IDM ( )

Drain Current (pulsed)

320

A

PTOT

Total Dissipation at TC = 25°C

300

W

Derating Factor

2

W/°C

dv/dt (2)

Peak Diode Recovery voltage slope

15

V/ns

EAS(3)

Single Pulse Avalanche Energy

870

mJ

Tstg

Storage Temperature

–55 to 175

°C

Tj

Max. Operating Junction Temperature

175

°C

TO-220

1

2

3

1

3

D2PAK

INTERNAL SCHEMATIC DIAGRAM

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