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STP8NC60FP Datasheet(PDF) 3 Page - STMicroelectronics

Part # STP8NC60FP
Description  N-CHANNEL 600V - 0.85ohm - 7A TO-220/TO-220FP PowerMesh™II MOSFET
PDF  9 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP8NC60FP Datasheet(HTML) 3 Page - STMicroelectronics

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STP8NC60/STP8NC60FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 300 V, ID = 3.5 A
RG = 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
17
ns
tr
Rise Time
10
ns
Qg
Total Gate Charge
VDD = 480V, ID = 7 A,
VGS = 10V
34.5
48
nC
Qgs
Gate-Source Charge
5.6
nC
Qgd
Gate-Drain Charge
17.5
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
Off-voltage Rise Time
VDD = 480V, ID = 7 A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 5)
8ns
tf
Fall Time
9
ns
tc
Cross-over Time
18
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
7
A
ISDM (2)
Source-drain Current (pulsed)
28
A
VSD (1)
Forward On Voltage
ISD = 7 A, VGS = 0
1.6
V
trr
Reverse Recovery Time
ISD =7 A, di/dt = 100A/µs
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
530
ns
Qrr
Reverse Recovery Charge
3.58
µC
IRRM
Reverse Recovery Current
13.5
A
Safe Operating Area for TO-220FP
Safe Operating Area for TO-220



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