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STP8NC60FP Datasheet(PDF) 3 Page - STMicroelectronics |
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STP8NC60FP Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 9 page ![]() 3/9 STP8NC60/STP8NC60FP ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 300 V, ID = 3.5 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) 17 ns tr Rise Time 10 ns Qg Total Gate Charge VDD = 480V, ID = 7 A, VGS = 10V 34.5 48 nC Qgs Gate-Source Charge 5.6 nC Qgd Gate-Drain Charge 17.5 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 480V, ID = 7 A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 5) 8ns tf Fall Time 9 ns tc Cross-over Time 18 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 7 A ISDM (2) Source-drain Current (pulsed) 28 A VSD (1) Forward On Voltage ISD = 7 A, VGS = 0 1.6 V trr Reverse Recovery Time ISD =7 A, di/dt = 100A/µs VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 530 ns Qrr Reverse Recovery Charge 3.58 µC IRRM Reverse Recovery Current 13.5 A Safe Operating Area for TO-220FP Safe Operating Area for TO-220 |
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