STP8NC70Z datasheet(1/13 Pages) STMICROELECTRONICS

Part #	STP8NC70Z

Description	N-CHANNEL 700V - 0.90ohm - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET

PDF	13 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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December 2002

STP8NC70Z - STP8NC70ZFP

STB8NC70Z - STB8NC70Z-1

N-CHANNEL 700V - 0.90

Ω - 6.8A TO-220/FP/D2PAK/I2PAK

Zener-Protected PowerMESH™III MOSFET

(1)ISD ≤6.8A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

.(*)Pulse width Limited by maximum temperature allowed

TO-220

1

2

3

TO-220FP

1

2

3

I2PAK

1

3

D2PAK

s

TYPICAL RDS(on) = 0.9 Ω

s

EXTREMELY HIGH dv/dt AND CAPABILITY

GATE-TO- SOURCE ZENER DIODES

s

100% AVALANCHE TESTED

s

VERY LOW GATE INPUT RESISTANCE

s

GATE CHARGE MINIMIZED

DESCRIPTION

The third generation of MESH OVERLAY™ Power

MOSFETs for very high voltage exhibits unsurpassed

on-resistance per unit area while integrating back-to-

back Zener diodes between gate and source. Such ar-

rangement gives extra ESD capability with higher rug-

gedness performance as requested by a large variety

of single-switch applications.

APPLICATIONS

s

SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

s

WELDING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STP8NC70Z/FP

700V

< 1.2

Ω

6.8 A

STB8NC70Z/-1

700V

< 1.2

Ω

6.8 A

Symbol

Parameter

Value

Unit

STP(B)8NC70Z(-1)

STP8NC70ZFP

VDS

Drain-source Voltage (VGS =0)

700

V

VDGR

Drain-gate Voltage (RGS =20kΩ)

700

V

VGS

Gate- source Voltage

± 25

V

ID

Drain Current (continuous) at TC = 25°C

6.8

6.8(*)

A

ID

Drain Current (continuous) at TC = 100°C

4.3

4.3(*)

A

IDM (q)

Drain Current (pulsed)

27

27(*)

A

PTOT

Total Dissipation at TC = 25°C

135

40

W

Derating Factor

1.08

0.32

W/°C

IGS

Gate-source Current (DC)

±50

mA

VESD(G-S)

Gate source ESD(HBM-C=100pF, R=15K

Ω)

3KV

dv/dt(1)

Peak Diode Recovery voltage slope

3

V/ns

VISO

Insulation Winthstand Voltage (DC)

--

2000

V

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

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