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STP8NM50 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STP8NM50
Description  N-CHANNEL 500V - 0.7ohm - 8A TO-220/TO-220FP MDmesh™Power MOSFET
PDF  9 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP8NM50 Datasheet(HTML) 1 Page - STMicroelectronics

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August 2002
STP8NM50
STP8NM50FP
N-CHANNEL 500V - 0.7
Ω - 8A TO-220/TO-220FP
MDmesh™Power MOSFET
(*)Limited only by maximum temperature allowed
n
TYPICAL RDS(on) = 0.7Ω
n
HIGH dv/dt AND AVALANCHE CAPABILITIES
n
100% AVALANCHE TESTED
n
LOW INPUT CAPACITANCE AND GATE
CHARGE
n
LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STP8NM50
STP8NM50FP
500V
500V
< 0.8
Ω
< 0.8
Ω
8 A
8 A
Symbol
Parameter
Value
Unit
STP8NM50
STP8NM50FP
VDS
Drain-source Voltage (VGS = 0)
500
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
500
V
VGS
Gate- source Voltage
±30
V
ID
Drain Current (continuous) at TC = 25°C
5
5 (*)
A
ID
Drain Current (continuous) at TC = 100°C
3.1
3.1 (*)
A
IDM (l)
Drain Current (pulsed)
20
20 (*)
A
PTOT
Total Dissipation at TC = 25°C
120
30
W
Derating Factor
0.4
W/°C
dv/dt
Peak Diode Recovery voltage slope
15
V/ns
VISO
Insulation Winthstand Voltage (DC)
--
2500
V
Tstg
Storage Temperature
–65 to 150
°C
Tj
Max. Operating Junction Temperature
TO-220
TO-220FP
1
2
3
1
2
3
INTERNAL SCHEMATIC DIAGRAM


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