STP9NB60 datasheet(1/9 Pages) STMICROELECTRONICS

Part #	STP9NB60

Description	N - CHANNEL 600V - 0.7ohm - 9A TO-220/TO220FP PowerMESH MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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STP9NB60

STP9NB60FP

N - CHANNEL 600V - 0.7

Ω - 9A TO-220/TO220FP

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 0.7

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

January 2000

TO-220

TO-220FP

1

2

3

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

STP9NB60

STP9NB60F P

VDS

Drain-source Voltage (VGS =0)

600

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

600

V

VGS

Gate-source Voltage

± 30

V

ID

Drain Current (cont inuous) at Tc =25

oC9.0

9.0(*)

A

ID

Drain Current (cont inuous) at Tc =100

oC5.7

5.7(*)

A

IDM (

•)

Drain Current (pulsed)

36

A

Ptot

T otal Dissipation at Tc =25

oC

125

40

W

Derat ing F act or

1.0

0.32

W /

o C

dv/dt (1)

Peak Diode Recovery voltage slope

4.5

V/ns

VISO

Insulation Withstand Voltage (DC)



2000

V

Tstg

St orage Temperature

-65 to 150

o C

Tj

Max. O perat ing Junction Temperat ure

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 9A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

(*)

Limited only by maximum temperature allowed

TYPE

VDSS

RDS(on)

ID

ST P9NB60

ST P9NB60FP

600 V

<0.8

Ω

<0.8

Ω

9.0 A

1/9

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