2STR2160 datasheet(4/9 Pages) STMICROELECTRONICS

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Electrical characteristics

2STR2160

4/9

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE =0)

VCB = -60 V

-0.1

µA

IEBO

Emitter cut-off current

(IC =0)

VEB = -5 V

-0.1

µA

V(BR)CBO

Collector-base

breakdown voltage

(IE = 0)

IC = -100 µA

-60

V(BR)CEO

(1)

Pulsed duration = 300

µs, duty cycle ≤1.5%

Collector-emitter

breakdown voltage

(IB = 0)

IC = -10 mA

-60

V(BR)EBO

Emitter-base breakdown

voltage (IC = 0)

IE = -100 µA

-5

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = -0.5 A

IB = -50 mA

IC = -1 A

IB = -100 mA

260

480

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = -1 A

IB = -100 mA

1.3

hFE

(1)

DC current gain

IC = -0.5 A

VCE = -2V

IC = -1 A

VCE = -2 V

IC = -2 A

VCE = -2 V

180

560

ton

toff

Resistive load

Turn-on time

Turn-off time

IC = -1.5 A

VCC = -10 V

IB1 = -IB2 = -150 mA

VBB(off)= 5 V

220

500

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