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2N1893 Datasheet(PDF) 1 Page - STMicroelectronics |
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2N1893 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 5 page  2N1893 SMALL SIGNAL NPN TRANSISTOR s GENERAL PURPOSE HIGH VOLTAGE DEVICE DESCRIPTION The 2N1893 is a Silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for use in high-performance amplifier, oscillator and switching circuits. It provides greater voltage swings in oscillator and amplifier circuits and more protection in inductive switching circuits due to its 120 V collector-to-base voltage rating. ® INTERNAL SCHEMATIC DIAGRAM January 2003 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 120 V VCER Collector-Emitter Voltage (RBE ≤ 10Ω) 100 V VCEO Collector-Emitter Voltage (IB = 0) 80 V VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 0.5 A Ptot Total Dissipation at Tamb ≤ 25 oC at TC ≤ 25 oC at TC ≤ 100 oC 0.8 3 1.7 W W W Tstg Storage Temperature -65 to 175 oC Tj Max. Operating Junction Temperature 175 oC TO-39 1/5 |
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