BUL903ED datasheet(2/6 Pages) STMICROELECTRONICS

2 / 6 page

THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

1.8

62.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 900 V

IEBO

Base-Emitter Leakage

Current

VEB = 7 V

100

µA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 10 mA

L = 25 mH

400

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 1 A

IB = 0.15 A

1.0

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 0.1 A

IB = 0.05 A

IC = 0.5 A

IB = 0.1 A

IC = 2.0 A

IB = 0.4 A

1.0

1.1

1.2

hFE

∗

DC Current Gain

IC = 5 mA

VCE = 10 V

IC = 0.5 A

VCE = 3 V

Parallel Diode Forward

Voltage

IF = 3 A

1.2

RESISTIVE LOAD

Delay Time

Rise Time

Storage Time

Fall Time

VCC = 125 V

IC = 0.7 A

IB1 = 0.05 A

IB2 = 0.4 A

tp = 300

µs

0.2

1.0

0.8

0.25

µs

RESISTIVE LOAD

Delay Time

Rise Time

Storage Time

Fall Time

VCC = 125 V

IC = 0.5 A

IB1 = 0.045 A

IB2 = 0.5 A

tp = 300

µs

0.2

0.5

0.8

0.5

µs

TRR

Diode Reverse

Recovery Time

IF = 1 A

di/dt = 100 A/

µs

VDD = 30 V

300

Esb

Avalanche Energy

L = 2 mH

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

BUL903ED

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