HD1530JL datasheet(2/5 Pages) STMICROELECTRONICS

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HD1530JL

2/5

Table 2.

Absolute Maximum Rating

Table 3.

Thermal Data

Table 4.

Electrical Characteristics (TCASE = 25°C; unless otherwise specified)

Note: 1 Pulsed duration = 300

μs, duty cycle ≤1.5%.

Symbol

Parameter

Value

Unit

VCES

Collector-Emitter Voltage (VBE = 0)

1500

VCEO

Collector-Emitter Voltage (IB = 0)

700

VEBO

Emitte-Base Voltage (IC = 0)

Collector Current

ICM

Collector Peak Current (tP < 5ms)

Base Current

IBM

Base Peak Current (tP < 5ms)

PTOT

Total dissipation at Tc = 25°C

200

TSTG

Storage Temperature

-65 to 150

°C

Max. Operating Junction Temperature

150

°C

Symbol

Parameter

Value

Unit

RthJC

Thermal Resistance Junction-Case____________________Max

0.625

°C/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off Current

(VBE = 0)

VCE = 1500V

VCE = 1500V____TC = 125°C

0.2

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5V

μA

VCEO(SUS)

Note: 1

Collector-Emitter

Susting Voltage (IB = 0)

IC = 10mA

700

VEBO

Emitter-Base Voltage (IC = 0)

IE = 10mA

VCE(sat)

Note: 1

Collector-Emitter Saturation Voltage IC = 13A _____ IB = 3.25A

2.5

VBE(sat)

Note: 1

Base-Emitter Saturation Voltage

IC = 13A _____ IB = 3.25A

1.5

hFE

DC Current Gain

IC = 1A _____ VCE = 5V

IC = 13A ____ VCE = 5V

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 12A ____ _ fh = 32KHz

IB(on) = 1.5A ___ IB(off) = -6.1A

3.3

240

μs

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 12A _____ fh = 48KHz

IB(on) = 2A ____ IB(off) = -6.7A

2.8

200

μs

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 6.5A _____ fh = 100KHz

IB(on) = 0.9A ___ IB(off) = -4.6A

1.5

110

μs

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