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HD1760JL Datasheet(PDF) 3 Page - STMicroelectronics

Part # HD1760JL
Description  Very high voltage NPN power transistor for high definition and slim CRT display
PDF  10 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

HD1760JL Datasheet(HTML) 3 Page - STMicroelectronics

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HD1760JL
Electrical characteristics
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Electrical characteristics
(TCASE = 25°C; unless otherwise specified)
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICES
Collector cut-off current
(VBE = 0)
VCE = 1700V
VCE = 1700V___TC = 125°C
0.2
2
mA
mA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 5V
10
µA
VCEO(sus)
(1)
1.
Pulsed duration = 300 ms, duty cycle £1.5%.
Collector-emitter
sustaining voltage (IB = 0)
IC = 10mA
800
V
VEBO
Emitter-base voltage (IC =
0)
IE = 10mA
10
V
VCE(sat)
(1)
Collector-emitter saturation
voltage
IC = 18A _____
IB = 4.5A
2
V
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = 18A _____
IB = 4.5A
1.5
V
hFE
DC current gain
IC = 2A ____
_ VCE = 5V
IC = 18A ____
VCE = 5V
5
30
8.5
ts
tf
Inductive load
Storage time
Fall time
IC = 12A _ __
fh = 32 KHz
IB(on) = 1A
_IB(off) = -6.9A
VCE(fly) = 1340V
VBE(off) = -2.7V
LBB(on) = 0.8µH
2.6
300
µs
ns
ts
tf
Inductive load
Storage time
Fall time
IC = 8A
___ fh = 100kHz
IB(on) = 1.3A IB(off) = -5.8A
VCE(fly) = 1300V
VBE(off) = -2.7V
LBB(on) = 0.25µH
2
110
µs
ns



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