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IRF630 Datasheet(PDF) 5 Page - STMicroelectronics |
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IRF630 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 14 page ![]() IRF630 - IRF630FP Electrical characteristics 5/14 Table 6. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 9 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 36 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD=9A, VGS=0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=9A, di/dt = 100A/µs, VDD=50V, Tj=150°C (see Figure 16) 170 0.95 11 ns µC A |
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