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IRF630FP Datasheet(PDF) 4 Page - STMicroelectronics

Part # IRF630FP
Description  N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay??II Power MOSFET
PDF  14 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

IRF630FP Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
IRF630 - IRF630FP
4/14
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
200
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
1
50
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
±
100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250µA
23
4
V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 4.5A
0.35
0.40
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
VDS > ID(on) x RDS(on)max,
ID = 4.5A
34
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
540
90
35
700
120
50
pF
pF
pF
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 100V, ID = 4.5A,
RG = 4.7Ω, VGS = 10V
(see Figure 14)
10
15
14
20
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=160V, ID = 9A
VGS =10V
31
7.5
9
45
nC
nC
nC



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