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IRF630M Datasheet(PDF) 4 Page - STMicroelectronics

Part # IRF630M
Description  N-channel 200V - 0.35Ω - 9A - TO-220 /TO-220FP Mesh Overlay??Power MOSFET
PDF  14 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

IRF630M Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
IRF630M - IRF630MFP
4/14
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 250µA, VGS = 0
200
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = max rating
VDS = max rating,
TC = 125 °C
1
50
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
2
3
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 4.5A
0.35
0.40
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward
transconductance
VDS > ID(on) x RDS(on)max,
ID =4.5A
34
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1 MHz,
VGS = 0
540
90
35
700
pF
pF
pF
td(on
tr
tr(Voff)
tf
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
VDD = 100V, ID = 4.5A
RG =4.7Ω VGS = 10V
10
15
12
12
14
20
17
17
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 160V, ID = 9A,
VGS = 10V
31
7.5
9
45
nC
nC
nC



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