MRF373A datasheet(2/10 Pages) FREESCALE

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Freescale Semiconductor

RF Product Device Data

MRF373ALR1 MRF373ALSR1

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

(VGS = 0 Vdc, ID =1 μA)

V(BR)DSS

—

Vdc

Zero Gate Voltage Drain Current

(VDS = 32 Vdc, VGS = 0 Vdc)

IDSS

—

μAdc

Gate-Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS

—

μAdc

On Characteristics

Gate Threshold Voltage

(VDS = 10 V, ID = 200 μA)

VGS(th)

2.9

Vdc

Gate Quiescent Voltage

(VDS = 32 V, ID = 100 mA)

VGS(Q)

2.5

3.3

4.5

Vdc

Drain-Source On-Voltage

(VGS = 10 V, ID = 3 A)

VDS(on)

—

0.41

0.45

Vdc

Dynamic Characteristics

Input Capacitance

(VDS = 32 V, VGS = 0, f = 1 MHz)

Ciss

—

98.5

—

Output Capacitance

(VDS = 32 V, VGS = 0, f = 1 MHz)

Coss

—

Reverse Transfer Capacitance

(VDS = 32 V, VGS = 0, f = 1 MHz)

Crss

—

Functional Characteristics (50 ohm system)

Common Source Power Gain

(VDD = 32 V, Pout = 75 W CW, IDQ = 200 mA, f = 860 MHz)

Gps

16.5

18.2

—

Drain Efficiency

(VDD = 32 V, Pout = 75 W CW, IDQ = 200 mA, f = 860 MHz)

—

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