STB7N52K3 datasheet(3/15 Pages) STMICROELECTRONICS

3 / 15 page

STB7N52K3 - STD7N52K3 - STF7N52K3 - STP7N52K3

Electrical ratings

3/15

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220 DPAK D²PAK TO-220FP

VDS

Drain-source voltage (VGS = 0)

525

VGS

Gate- source voltage

± 30

Drain current (continuous) at TC = 25 °C

6.3

6.3 (1)

Limited by package

Drain current (continuous) at TC = 100 °C

4(1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

25 (1)

PTOT

Total dissipation at TC = 25 °C

Derating factor

0.72

0.2

W/°C

VESD(G-S)

Gate source ESD(HBM-C = 100 pF,

R = 1.5 k

Ω)

2500

dv/dt (3)

ISD ≤ 6.3 A, di/dt = TBD, VDD = 80% V(BR)DSS.

Peak diode recovery voltage slope

TBD

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

Tstg

Storage temperature

-55 to 150

°C

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

TO-220 DPAK D²PAK TO-220FP Unit

Rthj-case Thermal resistance junction-case max

1.39

°C/W

Rthj-pcb

Thermal resistance junction-pcb max

°C/W

Rthj-amb Thermal resistance junction-ambient max

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Max value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

6.3

EAS

Single pulse avalanche energy

(starting Tj = 25°C, ID = IAR, VDD = 50V)

TBD

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