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2SA2007 Datasheet(PDF) 1 Page - Rohm |
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2SA2007 Datasheet(HTML) 1 Page - Rohm |
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1 / 1 page  2SA2007 Transistors High-speed Switching Transistor ( −60V,−12A) 2SA2007 !Features 1) High switching speed. (Typ. tf = 0.15µs at Ic = −6A) 2) Low saturation voltage. (Typ. VCE(sat) = −0.2V at IC / IB = −6A / −0.3A) 3) Wide SOA. (safe operating area) 4) Complements the 2SC5526. !External dimensions (Units : mm) ROHM : TO-220FN (2) Collector(Drain) (3) Emitter(Source) (1) Base(Gate) 0.75 0.8 2.54 (1) (3) (2) (1) 2.54 (3) (2) 1.3 1.2 10.0 3.2 φ 2.6 4.5 2.8 !Absolute maximum ratings (Ta = 25 °C) Parameter Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits −100 −60 −5 −12 2 25 150 −55 ∼ +150 Unit V V V A −20 A(Pulse) W W(Tc =25°C) °C °C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collectorpowerdissipation Junction temperature Storage temperature !Packaging specifications and hFE Type 2SA2007 TO-220FN F 500 Package hFE Code Basic ordering unit (pieces) − !Electrical characteristics (Ta = 25 °C) Min. Typ. Max. Unit Conditions BVEBO ICBO IEBO VCE(sat) fT Cob −5 − − − 160 − − − − − − − − 80 250 − − −10 −10 −0.3 320 − − V V µA µA V − MHz pF IC = −50µA BVCEO −60 −− V IC = −1mA IE = −50µA VCB = −100V VEB = −5V IC/IB = −6A/−0.3A −− −0.5 V IC/IB = −8A/−0.4A VBE(sat) −− −1.5 V IC/IB = −8A/−0.4A −− −1.2 V IC/IB = −6A/−0.3A hFE VCE = −2V , IC = −2A VCE = −10V , IE = 1A , f = 30MHz VCB = −10V , IE = 0A , f = 1MHz ton − − 0.3 µs IC = −6A , RL = 5Ω tstg − − 1.5 µsIB1 = −IB2 = −0.3A tf − − 0.3 µs VCC −30V Parameter BVCBO Symbol −100 Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Storage time Turn-on time Fall time |
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